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04/12/2012 |
Development of a Photomask Repair Technology for 16 Nanometer Generation
Presentation at Photomask Japan 2012
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Scientific instrument manufacturer SII NanoTechnology Inc. (SIINT) a 100% subsidiary of Seiko Instruments Inc. (SII), developed a photomask repair technology for 16nm half pitch (hp) generation. Detail of this technology will be presented at Photomask Japan 2012, Symposium on Photomask and Next Generation Lithography Mask Technology XIX, at Pacifico Yokohama from April 17th to 19th.
Focused Ion Beam*1 (FIB) technology equipped with newly developed Gas Field Ion Source (GFIS) enables to repair defects on photomask for 16nm hp generation. Furthermore, EUV*2 mask and nanoimprint*3 template can be repaired using this repair technology. This technology is developed based on the achievements of New Energy and Industrial Technology Development Organization (NEDO) and Semiconductor Leading Edge Technologies, Inc.*4 (Selete) Program from 2006 to 2010.
Semiconductor manufacturers move to smaller line width for higher performance and cost down. 20 to 30 nanometer semiconductors such as MPU, NAND Flash, and DRAM are currently high end products in the market. Manufacturers further miniaturize their manufacturing process below 20 nanometers. Repair of sub 20 nanometer generation photomask requires the minimum repairable size of 10 nanometers; however, the smallest repairable size by conventional FIB technology using Liquid Metal Gallium Ion Source or electron beam (EB) technology is 20 to 30 nanometers. SII NanoTechnology Inc. achieves minimum repairable line width 10 nanometers by FIB technology using Gas Field Ion Source.
New photomask repair system equipped with Gas Field Ion Source will be released in September, 2012.
[Key Features]
(1) Minimum Repairable Line Width 10 nanometers
Device miniaturization requires higher repair accuracy of photomask for leading-edge semiconductors. Current minimum repairable line width by conventional mask repair tool is 20 to 30 nanometers. Minimum repairable line width 10 nanometer is achieved by FIB technology using Gas Field Ion Source which enables to repair photomask for leading-edge semiconductors.
(2) Repair New Type MoSi Mask by Selective Etching*5
Most of the current advanced photomasks are Half Tone type Phase Shift Mask using molybdenum silicide (MoSi) film. Recently highly durable MoSi material is being proposed. However, during etching process, not only new MoSi material but quartz is etched by conventional repair method because it does not have selective etching capability. This technology has the etching selectivity between new MoSi and Quartz, 5 to 1 (5:1). Thus it enables to repair new MoSi successfully.
(3) Low Damage Processing and Micro-fabrication
FIB processing using Gas Field Ion Source achieves low damage photomask repair compared with processing using Ga ion source. Furthermore, this technology enables to repair EUV mask for leading-edge process as well as conventional photomask. We are currently working to develop technologies for the applications such as nanoimprint template which requires much smaller fabrication that conventional mask repair tool cannot achieve.
[Note]
*1 FIB : A system to observe and process micro structure using focused ion beam
*2 EUV: Extreme Ultra-Violet rays which enables fine processing by shorter wavelength than laser.
*3 Nanoimprint lithography: A technology to process patterns on semiconductor devices using nanometer size mold
*4 Semiconductor Leading Edge Technologies, Inc. (Selete): A consortium established by ten companies of Japanese semiconductor makers' investment and dissolved in June, 2011 after finishing its role.
*5 Selective Etching: Method to etch the material faster than the others on a sample using different etching rate of materials.
( Etching: A technology to remove an object physically and/or chemically)
Corporate Communication Dept.
Seiko Instruments Inc.
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Beam Technology Sales & Marketing Dept.
SII NanoTechnology Inc.
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The content of this news release is based on the information as of the release date.Please note that the content may not be always up-to-date.
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